A self-formed nanonetwork meshed Pt layer on an epitaxial GaN surface

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49920

Title:	A self-formed nanonetwork meshed Pt layer on an epitaxial GaN surface
Authors:	Liu,CY;Chang,CC;Chen,YJ;Chen,PH
Contributors:	化學工程與材料工程學系
Keywords:	P-TYPE GAN;OHMIC CONTACT;THIN-FILMS;NANOSTRUCTURES;STABILITY
Date:	2011
Issue Date:	2012-03-27 16:26:30 (UTC+8)
Publisher:	國立中央大學
Abstract:	A self-formed nanonetwork meshed Pt layer formed on the epitaxial (0 0 0 1) GaN substrate upon thermal annealing. Electron backscatter diffraction analysis shows that, while the meshed Pt layer was forming on the GaN surface, Pt atoms rearranged themselves in a (1 1 1)-preferred orientation on (0 0 0 1) GaN. The (1 1 1) Pt/(0 0 0 1) GaN interface represents the most energy-favored stacking configuration. This unique meshed Pt layer demonstrates a relatively high transmittance in visible range, which can be used as a high-reflectivity/low-resistance p-GaN contact for high-power LEDs. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Relation:	SCRIPTA MATERIALIA
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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