Evolution of RESET current and filament morphology in low-power HfO(2) unipolar resistive switching memory

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题名:	Evolution of RESET current and filament morphology in low-power HfO(2) unipolar resistive switching memory
作者:	Hou,TH;Lin,KL;Shieh,J;Lin,JH;Chou,CT;Lee,YJ
贡献者:	化學工程與材料工程學系
日期:	2011
上传时间:	2012-03-27 16:27:09 (UTC+8)
出版者:	國立中央大學
摘要:	Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO(2)/Si structure with low RESET current of 50 mu A and RESET power of 30 mu W. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565239]
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[化學工程與材料工程學系 ] 期刊論文

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