Growth of bent carbon nanotubes by in-situ control of cantilever bending

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Title:	Growth of bent carbon nanotubes by in-situ control of cantilever bending
Authors:	Chen,IC;Wu,PJ;Lin,PY;Wang,YC;Chen,YH
Contributors:	材料科學與工程研究所
Keywords:	CHEMICAL-VAPOR-DEPOSITION;FIELD-EMISSION PROPERTIES;SHEATH;NANOFIBRES;MICROSCOPE;ALIGNMENT;BEAMS;CVD
Date:	2011
Issue Date:	2012-03-27 16:29:04 (UTC+8)
Publisher:	國立中央大學
Abstract:	A new and simple method for in-situ control of the growth direction of carbon nanotubes (CNTs) on cantilevers has been developed using plasma enhanced chemical vapor deposition (PECVD). Plasma-induced surface stresses in PECVD processes tend to cause bending of the cantilevers, which significantly changes the electric field distribution near the free-end of the cantilever. By adjusting the flow ratio of the feed gases during CNT growth, the degree of cantilever bending can be controlled due to the change in the plasma-induced surface stress, and in doing so manipulating the field line direction, as well as the growth direction of CNTs. Combining this in-situ tunable CNT growth technique with electron beam induced deposition of catalyst patterns, we have fabricated a bent CNT on a cantilever in one single, continuous deposition run. (C) 2011 Elsevier Ltd. All rights reserved.
Relation:	CARBON
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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