English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 78728/78728 (100%)
造訪人次 : 33554575      線上人數 : 442
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/50126


    題名: Numerical simulation of thermal and mass transport during Czochralski crystal growth of sapphire
    作者: Lu,CW;Chen,JC
    貢獻者: 機械工程學系
    關鍵詞: Y3AL5O12 SINGLE-CRYSTALS;HEAT-EXCHANGER-METHOD;FLUID-FLOW;OXIDE MELT;DIRECTIONAL GROWTH;SEEDING PROCESS;SPOKE PATTERN;SOLIDIFICATION;COMPUTATION;FIELDS
    日期: 2010
    上傳時間: 2012-03-27 17:04:01 (UTC+8)
    出版者: 國立中央大學
    摘要: The thermal and flow transport in an inductively heated Czochralski crystal growth furnace during a crystal growth process is investigated numerically. The temperature and flow fields inside the furnace, coupled with the heat generation in the iridium crucible induced by the electromagnetic field generated by the RF coil, are computed. The results indicate that for an RF coil fixed in position during the growth process, although the maximum value of the magnetic, temperature and velocity fields decrease, the convexity of the crystal-melt interface increases for longer crystal growth lengths. The convexity of the crystal-melt interface and the power consumption can be reduced by adjusting the relative position between the crucible and the induction coil during growth. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
    關聯: CRYSTAL RESEARCH AND TECHNOLOGY
    顯示於類別:[機械工程學系] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML347檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明