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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51018

    Title: Characterization of Silicon Oxide Films Deposited from a Permanent-Magnet Helicon Plasma Source
    Authors: Jan,DJ;Tang,CY;Ai,CF
    Contributors: 光電科學與工程學系
    Date: 2011
    Issue Date: 2012-03-27 18:15:39 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Silicon oxide films were deposited by an individual PM helicon source using HMDSO as a precursor and N(2)O as the reactive gas at low temperature. The chemical structure and elemental composition of the films are characterized by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy, and the optical and mechanical properties of the films are evaluated by a thin-film metrology system using reflectance spectra and a nanoindenter. The experimental results show that the N(2)O ratio in the plasma has a strong impact on the optical and structural characteristics of the deposited films: with increasing N(2)O flow ratios, the hardness of the deposited films increases while the deposition rate and carbon content decreases. At the same time, the characteristics of the oxide films gradually shift away from those of polymers towards those of SiO(2) The technique presented here may find applications in making barrier films for polymer substrates.
    Appears in Collections:[光電科學與工程學系] 期刊論文

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