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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51896

    Title: A Broadband High Efficiency High Output Power Frequency Doubler
    Authors: Chang,HY;Chen,GY;Hsin,YM
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:09:48 (UTC+8)
    Publisher: 國立中央大學
    Abstract: An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 mu m AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental rejection of better than 13 dB over the operation bandwidth. The output 1 dB compression point (P(1 dB)) and the saturation output power (P(sat)) are higher than 7.3 and 10 dBm, respectively. This work presents the highest figure-of-merit (FOM) of 25.14 as compared to other previously reported broadband doublers.
    Appears in Collections:[電機工程學系] 期刊論文

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