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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51900

    Title: A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique
    Authors: Lin,CH;Chang,HY
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:09:55 (UTC+8)
    Publisher: 國立中央大學
    Abstract: This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 mu m enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P(1 dB)) of higher than 27 dBm.
    Appears in Collections:[電機工程學系] 期刊論文

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