An alternative passivation approach for AlGaN/GaN HEMTs

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51908

Title:	An alternative passivation approach for AlGaN/GaN HEMTs
Authors:	Lin,HK;Yu,HL;Huang,FH
Contributors:	電機工程學系
Keywords:	ELECTRON-MOBILITY TRANSISTORS;FIELD-EFFECT TRANSISTORS;SURFACE PASSIVATION;DISPERSION
Date:	2010
Issue Date:	2012-03-28 10:10:08 (UTC+8)
Publisher:	國立中央大學
Abstract:	This work proposes a two-step passivation approach for AlGaN/GaN high-electron-mobility transistors (HEMTs) and demonstrates improved dc, high-frequency and microwave power performance. These improvements depend primarily on the pretreatment of the AlGaN surface provided by the selective dry etching of n(+)-GaN cap layers and the subsequent RTA annealing of ohmic contacts, both of which steps are performed immediately before the first-step passivants are deposited. No additional process step is adopted to prepare the surface for passivation. PECVD-deposited SiN(x) and e-beam-evaporated SiO(x) are selected as the passivants in this work and both effectively suppress trapping effect when used in the two-step passivation approach. (C) 2010 Elsevier Ltd. All rights reserved.
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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