Carrier dynamics in isoelectronic ZnSe(1-x)O(x) semiconductors

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题名:	Carrier dynamics in isoelectronic ZnSe(1-x)O(x) semiconductors
作者:	Lin,YC;Chung,HL;Chou,WC;Chen,WK;Chang,WH;Chen,CY;Chyi,JI
贡献者:	電機工程學系
关键词:	ALLOYS
日期:	2010
上传时间:	2012-03-28 10:10:27 (UTC+8)
出版者:	國立中央大學
摘要:	This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe(1-x)O(x) (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent beta followed by its monotonic increase with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473776]
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[電機工程學系] 期刊論文

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