DABISR: A Defect-Aware Built-In Self-Repair Scheme for Single/Multi-Port RAMs in SoCs

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题名:	DABISR: A Defect-Aware Built-In Self-Repair Scheme for Single/Multi-Port RAMs in SoCs
作者:	Tseng,TW;Huang,YJ;Li,JF
贡献者:	電機工程學系
关键词:	REDUNDANCY ANALYSIS;INFRASTRUCTURE IP;EMBEDDED MEMORIES;2-D REDUNDANCY;YIELD
日期:	2010
上传时间:	2012-03-28 10:10:37 (UTC+8)
出版者:	國立中央大學
摘要:	Built-in self-repair (BISR) techniques are widely used to enhance the yield of embedded random access memories (RAMs). Fault-location ability of test algorithms executed by a BISR circuit has heavy impact on the repair efficiency of the BISR circuit. This paper proposes a defect-aware BISR (DABISR) scheme for single-port RAMs (SPRAMs) and multiport RAMs (MPRAMs) in system chips. Multiple RAMs can share a DABISR such that the area cost of DABISR is drastically reduced. We also present two defect-location algorithms (DLAs) for identification of bridge defects between word-lines and bit-lines of MPRAMs. The DABISR can perform DLAs to locate bridge defects such that it can provide high repair efficiency. For example, simulation results show that if a faulty two-port RAM has 20% inter-port faults, the DLAs can help to gain 8.4-14.4% increase of repair rate for different redundancy configurations. In comparison with an existing shared BISR scheme, however, the DABISR only incurs about 0.34% additional area overhead to support the function of DLAs.
關聯:	IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
显示于类别:	[電機工程學系] 期刊論文

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