DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I base-emitter junction and a type-II base-collector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current, and constant current gain over a wide current range. In addition, the DHBTs exhibit rather high current gains despite the use of a heavily doped thick InGaAsSb base layer. This indicates the long minority carrier lifetime of the InGaAsSb material. A high current gain over base sheet resistance ratio is, thus, realized with these novel DHBTs.
