English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23114280      Online Users : 480
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51943

    Title: Fabrication study of AlN solar-blind (< 280 nm) MSM photodetectors grown by low-temperature deposition
    Authors: Chen,MR;Chang,SH;Chen,TC;Hsu,CH;Kao,HL;Chyi,JI
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:11:29 (UTC+8)
    Publisher: 國立中央大學
    Abstract: AlN, an important semiconductor with the widest band gap among III-nitrides, was employed to construct solar blind metal-semiconductor-metal photodetectors (MSM-PDs). MSM-PDs were fabricated on AlN epitaxial thin films deposited on GaN/sapphire using a helicon sputtering system at a low temperature of 300 degrees C. The dark current of the device is as low as 200 fA at 20 V and the photocurrent illuminated by a D(2) lamp increases more than two orders of magnitude. The photocurrent increases almost linearly with the incident optical power at the wavelength of 200 nm. The results show that the low temperature grown AlN MSM device is suitable for the application of deep UV detection. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明