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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/51952


    題名: GaAs-Based Transverse Junction Superluminescent Diodes With Strain-Compensated InGaAs-GaAsP Multiple-Quantum-Wells at 1.1-mu m Wavelength
    作者: Guol,SH;Chou,MG;Yang,YJ;Sun,CK;Shi,JW
    貢獻者: 電機工程學系
    關鍵詞: LIGHT-EMITTING-DIODES;OPTICAL COHERENCE TOMOGRAPHY
    日期: 2010
    上傳時間: 2012-03-28 10:11:43 (UTC+8)
    出版者: 國立中央大學
    摘要: In this study, we demonstrate a transverse junction superluminescent diode (TJ-SLD) with an engagement of chirped In(x)Ga(1-x)As-GaAs(0.9)P(0.1) strain-compensated multiple-quantum-wells (SC MQWs) at 1.1-mu m wavelength. The problem relative to inhomogeneous carrier distribution in each QW, which is a problem in traditional vertical junction SLDs (VJ-SLDs), can be effectively minimized by utilizing the benefit of lateral carrier injection in TJ devices. Our demonstrated device offers significant improvements in threshold current, output power, and optical bandwidths compared to TJ-SLD without SC MQWs. Furthermore, compared with the high-performance similar to 1-mu m VJ-SLDs, this novel device exhibits a comparable output power and 3-dB bandwidth performance with a more stable electroluminescence spectrum, which varies only negligibly under a wide range of bias current.
    關聯: IEEE PHOTONICS TECHNOLOGY LETTERS
    顯示於類別:[電機工程學系] 期刊論文

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