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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51974


    Title: PERFORMANCE IMPROVEMENT OF AlGaN/GaN HEMTS USING TWO-STEP SILICON NITRIDE PASSIVATION
    Authors: Lin,HK;Yu,HL;Huang,FH
    Contributors: 電機工程學系
    Keywords: ELECTRON-MOBILITY TRANSISTORS;FIELD-EFFECT TRANSISTORS;SURFACE PASSIVATION;SIN;BREAKDOWN;HFETS
    Date: 2010
    Issue Date: 2012-03-28 10:12:17 (UTC+8)
    Publisher: 國立中央大學
    Abstract: We report fabrication of AlGaN/GaN high electron mobility transistor (HEMT) with improved DC, high frequency and microwave power performances by employing a two-step passivation approach. A pretreated AlGaN surface is provided by dry etching n(+)-GaN cap layer and RTA annealing ohmic contacts right before Si(3)N(4) passivant is deposited. No additional process step is associated with the surface preparation for the passivation process. Pulsed I-V characteristics show that the proposed passivation process successfully eliminates trapping effect at Si3N4 and AlGaN interface and is considered to be the important factor for the performance enhancement. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Len 52: 1614-1619, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25266
    Relation: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    Appears in Collections:[電機工程學系] 期刊論文

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