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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51985

    Title: Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
    Authors: Lin,SY;Tseng,CC;Lin,WH;Mai,SC;Wu,SY;Chen,SH;Chyi,JI
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:12:36 (UTC+8)
    Publisher: 國立中央大學
    Abstract: A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blueshift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs heterostructures. Significant electroluminescence (EL) is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blueshift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures. A model is established to explain the operation mechanisms of the type-II QD LED.
    Appears in Collections:[電機工程學系] 期刊論文

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