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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51996

    Title: Tailoring of the Wave Function Overlaps InAs/GaAs(1-x)Sb(x) Type-II Quantum Dots
    Authors: Hsu,WT;Liao,YA;Lu,SK;Cheng,SJ;Chiu,PC;Chyi,JI;Chang,WH
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:12:53 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs(1-x)Sb(x) layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs(1-x)Sb(x) layer. We find that the type-II QD structure can sustain thermal annealing up, to 850 degrees C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs(1-x)Sb(x) type-II QDs. (C) 2009 Elsevier B.V. All rights reserved.
    Appears in Collections:[電機工程學系] 期刊論文

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