Temperature-Dependent Characteristics of a GaN/InGaN/ZnO Heterojunction Bipolar Transistor

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 期刊論文 > Item 987654321/51997

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/51997

題名:	Temperature-Dependent Characteristics of a GaN/InGaN/ZnO Heterojunction Bipolar Transistor
作者:	Hsueh,KP;Pan,CT;Li,CT;Lin,HC;Hsin,YM;Chyi,JI
貢獻者:	電機工程學系
日期:	2010
上傳時間:	2012-03-28 10:12:54 (UTC+8)
出版者:	國立中央大學
摘要:	This work presents dc characteristics (gain and leakage current) of a GaN/InGaN/ZnO npn collector-up heterojunction bipolar transistor (HBT) measured at 300, 200, and 100 K. The GaN-based epilayers of HBT were grown by metallorganic chemical vapor deposition, and the n-ZnO film was then deposited on top of p-InGaN by sputtering. X-ray diffraction analysis demonstrates that annealing at 600 degrees C for 60 s in ambient N(2) improved the quality of the ZnO film. Moreover, this study shows that the current gains (beta) from the Gummel plot increased as the temperature decreased because the leakage current of the collector current (I(C)) is not a strong function of temperature. However, gains (G(CE)) from the measured common-emitter current-voltage characteristics increased slightly as the temperature decreased due to a reduction in the recombination current coupled with lower injection efficiency. These preliminary results show the potential of fabricating GaN/InGaN/ZnO HBTs without dry etching to reach the p-GaN layer, as required in the emitter-up geometry.
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
顯示於類別:	[電機工程學系] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	467	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing