English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23251964      Online Users : 580
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52072

    Title: High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers
    Authors: Liu,WS;Wu,HM;Liao,YA;Chyi,JI;Chen,WY;Hsu,TM
    Contributors: 電機工程學系
    Date: 2011
    Issue Date: 2012-03-28 10:14:45 (UTC+8)
    Publisher: 國立中央大學
    Abstract: This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5 x 10(10) cm(-2) with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV. (C) 2010 Elsevier B.V. All rights reserved.
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明