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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52078


    Title: Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique
    Authors: Shi,JW;Huang,HW;Kuo,FM;Lai,WC;Lee,ML;Sheu,JK
    Contributors: 電機工程學系
    Keywords: HIGH-SPEED;PERFORMANCE;ARRAYS;LASERS
    Date: 2011
    Issue Date: 2012-03-28 10:14:54 (UTC+8)
    Publisher: 國立中央大學
    Abstract: For the first time, the internal carrier dynamic inside GaN-based green light-emitting diodes (LEDs) during operation has been directly observed using the demonstrated electrical-optical pump-probe technique. Short electrical pulses (similar to 100 ps) were pumped into high-speed cascade green LEDs, and the output optical pulses were probed using high-speed photoreceiver circuits. Using such a method, the recombination time constant of the carriers can be directly measured without any assumption about the recombination process. A high-speed cascade LED structure was adopted in the experiments to eliminate the influence of the RC delay time on the measured responses. Ourmeasurement results indicate that both single-and three-LED cascade structures have the same internal response time due to current continuity. Furthermore, based on responses measured under different temperatures (from 25 degrees C to 200 degrees C), the origin of the efficiency droop in GaN-based green LEDs under a high bias current density may be attributed to the strong nonradiative Auger effect rather than device heating or carrier overflow. The demonstrated measurement scheme and high-speed cascade device structure offer a novel and simple way to straightforwardly investigate the internal carrier dynamic inside the active layers of the LED during forward-bias operation.
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程學系] 期刊論文

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