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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52079

    Title: Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique
    Authors: Shi,JW;Kuo,FM;Lin,CW;Chen,W;Yan,LJ;Sheu,JK
    Contributors: 電機工程學系
    Date: 2011
    Issue Date: 2012-03-28 10:14:55 (UTC+8)
    Publisher: 國立中央大學
    Abstract: The mechanism responsible for the efficiency droop in AlGaInP-based vertically structured red light-emitting diodes (LEDs) is investigated using dynamic measurement techniques. Short electrical pulses (similar to 100 ps) are pumped into this device and the output optical pulses probed using high-speed photoreceiver circuits. From this, the internal carrier dynamic inside the device can be investigated by use of the measured electrical-to-optical (E-O) impulse responses. Results show that the E-O responses measured under different bias currents are all invariant from room temperature to similar to 100 degrees C. This is contrary to most results reported for AlGaInP-based red LEDs, which usually exhibit a shortening in the response time and degradation in output power with the increase of ambient temperature. According to the extracted fall-time constants of the E-O impulse responses, the origin of the efficiency droop in our vertical LED structure, which has good heat-sinking, is not due to thermally induced carrier leakage, but rather should be attributed to defect recombination and the saturation of defect/spontaneous recombination processes under low and high bias current, respectively.
    Appears in Collections:[電機工程學系] 期刊論文

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