Silicon Photodiodes in Standard CMOS Technology

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52101

Title:	Silicon Photodiodes in Standard CMOS Technology
Authors:	Chou,FP;Chen,GY;Wang,CW;Liu,YC;Huang,WK;Hsin,YM
Contributors:	電機工程學系
Keywords:	OPTICAL RECEIVER;HIGH-SPEED;AVALANCHE PHOTODETECTOR;BANDWIDTH-ENHANCEMENT;PHOTORECEIVER OEICS;WAVE-GUIDE;MODULES;DESIGN;GHZ
Date:	2011
Issue Date:	2012-03-28 10:15:28 (UTC+8)
Publisher:	國立中央大學
Abstract:	Silicon photodiodes (PDs) of 850-nm-wavelength, in standard 0.18-mu m CMOS technology, are systematically presented and discussed in this study. A basic p-n PD can obtain high responsivity of 0.3 A/W and response of 1.6 GHz while biasing in the avalanche process. However, Si PDs from different CMOS foundries would result in different performance due to the different n-/p-well doping profile. A basic p-n PD with body contact can effectively remove the slow diffusion carrier in the Si substrate and demonstrate improved response. Both body contact and deep n-well design in an octagonal PD can improve the performance of basic p-n PD significantly. The response is improved to 8.7 GHz with 0.8 A/W before breakdown. The improvement is due to the block and elimination of slow diffusion carriers in the Si substrate. Finally, Si PD with built-in n-p-n bipolar junction transistor and edge-coupled PD are proposed to further improve responsivity and response.
Relation:	IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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