Catalyst-free ZnO nanowires grown on a-plane GaN

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题名:	Catalyst-free ZnO nanowires grown on a-plane GaN
作者:	Chen,CW;Pan,CJ;Tsao,FC;Liu,YL;Kuo,CW;Kuo,CH;Chi,GC;Chen,PH;Lai,WC;Hsueh,TH;Tun,CJ;Chang,CY;Pearton,SJ;Ren,F
贡献者:	物理學系
日期:	2010
上传时间:	2012-06-11 10:41:40 (UTC+8)
出版者:	國立中央大學
摘要:	ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)(ZnO)parallel to(110)(GaN). Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation. (C) 2009 Elsevier Ltd. All rights reserved.
關聯:	VACUUM
显示于类别:	[物理學系] 期刊論文

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