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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/54192

    Title: 以田口法優化面板結構參數以消除薄膜電晶體液晶顯示器液晶指刮;Taguchi method to optimize the panel structure parameters Refers to eliminate the thin film transistor liquid crystal display LCD scraping
    Authors: 蔡昌成;Tsai,Chang-Cheng
    Contributors: 光電科學研究所碩士在職專班
    Keywords: 液晶指刮;垂直配向型;液晶顯示器;田口實驗計畫法;TFT-LCD;VA;Smudge;Taguchi method
    Date: 2012-08-28
    Issue Date: 2012-09-11 18:39:33 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本篇論文主要應用田口實驗計畫法針對垂直配向型(Vertical Alignment, VA)顯示技術之液晶顯示器進行指刮(Smudge)現象之優化,將指刮消失速率由3.0sec降至1.0sec以下,,本實驗改變之面板結構設計參數,包含下基板側(TFT側)之氧化銦錫狹縫(ITO Slit)大小及上基板側(CF側)凸塊(Bump)大小和高度,並以Minitab公司之Minitab 15版軟體進行實驗結果數據分析以得到指刮(Smudge)消失速率與面板結構參數之關係式為:消失速率=-6.2348+0.703125x(Bump大小)+6.15625x(Bump高度)-0.46875x(Bump高度xBump大小)依據分析結果,以凸塊(Bump)大小17.947μm,搭配凸塊(Bump)高度2.387μm,優化之指刮(Smudge)消失速率為0.9981sec;並藉由分析過程建立之面板結構參數關係及分析方式,提供後續設計上及變數分析上之參考,以減少以往業界大量使用的一個實驗條件一次改變一個影響因子單因子實驗法(single factor experiment,One-factor-at-a-time)的實驗配置法。This thesis mainly refers to scrape the phenomenon of optimized application of Taguchi method for displays of vertical alignment technology Smudge disappearance rate dropped from 3.0sec to 1.0sec following design parameters of the experiment to change the panel structure constants including ITO silt size on TFT substrate and bump size and height on Color-filter substrate, and the data analysis of the experimental results Minitab Inc. Minitab 15 software refers disappearance rate and the panel structure parameters of relationship:Disappearance rate=-6.2348+0.703125x(Bump size)+6.15625x(Bump height)-0.46875x(Bump height xBump size)Based on the analysis results, bump size 17.947μm, with bump height 2.387μm optimization refers disappearance rate 0.9981sec for Smudge; panel structure parameters and by analyzing the process of establishing relations and analysis, follow-up design and variable analysis on a reference to reduce one of the industry's heavy use of experimental conditions in the past time to change the configuration of a of impact factor single factor experiment experimental law.
    Appears in Collections:[光電科學研究所碩士在職專班 ] 博碩士論文

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