氫氣的調控對化學氣相沉積法成長石墨烯之影響;Study of Graphene Grown by Low Pressure Chemical Vapor Deposition with Different H2/CH4 Ratio.

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題名:	氫氣的調控對化學氣相沉積法成長石墨烯之影響;Study of Graphene Grown by Low Pressure Chemical Vapor Deposition with Different H2/CH4 Ratio.
作者:	黃姵珊;Huang,Pei-shan
貢獻者:	物理研究所
關鍵詞:	石墨烯;化學氣相沉積法;銅箔;Graphene;CVD;Cooper foil
日期:	2012-08-20
上傳時間:	2012-09-11 18:41:19 (UTC+8)
出版者:	國立中央大學
摘要:	本文是探討氫氣對成長石墨烯的影響，本研究中以氫氣、甲烷為反應氣體利用低壓化學氣相沉積法成長在銅箔上。探討在製程條件上改變氫氣流量，對LPCVD成長石墨烯之影響。所成長之石墨烯主要以拉曼光譜分析其石墨化品質。此外，並以掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)分別檢視成長之試片表面形貌。實驗結果顯示，本研究成功以LPCVD方法成長石墨烯，在氣體比例H2/CH4=100 sccm/10 sccm，獲得最佳品質之石墨烯，可能的原因為氧氣與大量H2及CHx反應生成OH等自由基，平衡製程環境中C與H自由基而獲得較高品質。由SEM結果在氫氣流量為100sccm時，觀察到六角結構的石墨烯。同時，拉曼分析結果表示氣體比例H2/CH4=100 sccm/10 sccm時，半高寬約為30cm-1以及2D/G比例為2.5。證明大流量的氫氣的條件下，較易成長出高品質的石墨烯。The purpose of the research was to investigate graphene with different hydrogen flow. Graphene were growth on Copper foil as substrate by Low pressure chemical vapor deposition system with H2 and CH4 as source gases. Graphene were examined by SEM、FTIR and Raman spectroscopy to evaluate their structures and properties. The experimental results show that we successfully growth graphene by LPCVD. When the gas ratio of H2/CH4 = 100 sccm/ 10 sccm, we get the best quality of graphene due to the Oxygen and Hydrogen and CHx the reaction of OH radicals, C and H radicals in the environment of the balancing process to receive a higher quality. From SEM image results reveal that of graphene domains, which has a hexagonal shape on a cooper foils at 100sccm of hydrogen flow. Raman analysis results that gas ratio H2/CH4 = 100 sccm/10 sccm has 30cm-1 of FWHM 2.5 of 2D / G ratio.
顯示於類別:	[物理研究所] 博碩士論文

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