Siblings Research Project [36/36] journal & Dissertation [951/951] retired tests [405/405] Collection Statistics Item counts issued in 3 years: 308(10.09%) Items With Fulltext: 3053(100.00%) Download counts of the item Download times greater than 0: 3053(100.00%) Download times greater than 100: 2995(98.10%) Total Bitstream Download Counts: 2036234(73.42%) Last Update: 2026-06-28 18:39 Top Upload Loading... Top Download Loading... Recent Submissions 開發多樣化植入式醫療裝置的無線電力和雙向資料傳輸系統;Developm... 高功率密度氮化鎵基三相飛跨電容多層級轉換器之建模與控制;Modelin... 寬能隙氧化物二極體與N型MOS電晶體之研究;The Research ... 硼在氮化鎵高電子遷移率電晶體中的應用與影響;The Applicati... 基於輕量化多模型整合與強化學習之高效率與泛化擺置方法;Lightwei... 後段製程相容之垂直堆疊式3D 2TnC非揮發性記憶體製程開發與操作;P... 基於擺置特徵之網路層級線長預測輕量化機器學習架構;A Lightwei... 針對數位記憶體內運算 MAC 操作之自動化測試生成：一種故障本質結構適... 微型化雙頻平衡式與可重組式 功率分配器設計;Miniaturized ... 使用120-nm GaN 與 100-nm GaAs pHEMT 製程...

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Showing items 161-170 of 3053. (306 Page(s) Totally) << < 12 13 14 15 16 17 18 19 20 21 > >> View [10|25|50] records per page

Date	Title	Authors
2024-11-26	基於氮化鍺碲碳非砷化物選擇器的高熱穩定性、低電壓變異性及高循環耐久性 (>10¹¹) 的物理分析;The Physical Analysis of High Thermal Stability, Low Voltage Variability, and High Endurance (>10¹¹) Based on a Germanium Tellurium Carbon Nitride Non-Arsenide Selector	吳湧峰; Wu, Yung-Feng
2024-11-26	實現全後段製程相容性、基於IGZO雙電晶體及鐵電電容器之非揮發性記憶體;Enabling Fully Back-End-of-Line Compatible in IGZO Based Two Transistor One Ferroelectric Capacitor (2T1F) Non-Volatile Memory	蔡堉秭; Tsai, Yu-Tzu
2024-11-25	應用0.25 μm GaN/SiC HEMT於連續B類 X頻段功率放大器與K頻段 WIPD 覆晶功率放大器暨90奈米 CMOS FR3 寬頻發射器之研製;Design and Implementation of a 0.25 μm GaN/SiC HEMT Continuous Class-B X-Band Power Amplifier, K-Band WIPD Flip-Chip Power Amplifier, and 90-nm CMOS FR3 Wideband Transmitter	陳柏豪; Chen, Po-Hao
2024-11-22	高功率氮化鎵高電子遷移率電晶體崩潰特性優化研究;Optimization Study on the Breakdown Characteristics of High-Power GaN High Electron Mobility Transistors	呂彥鋒; Lu, Yen-Feng
2024-11-20	超晶格HfO2/ZrO2結構可靠性及In2O3與TeO2通道材料遷移率的第一原理計算研究;First-Principles Study on the Reliability of Superlattice HfO2/ZrO2 Structures and the Mobility of In2O3 and TeO2 Channel Materials	許明駿; HSU, Ming-Chun
2024-11-18	應用於C/X頻帶之低功耗寬頻接收機前端電路之研製;Design and Implementation of a Low-Power, Wideband Receiver Front End for C/X Band Applications	賴薈之; LAI, HUI-CHIH
2024-11-14	高熱穩定性、長效耐久性 (>1011次 )且具瞬時讀取之多功能閘極 (TiN/Mo/TiOxNy/SL-HZO)層狀堆疊鐵電記憶體技術開發;Development of ferroelectric memory technology with high thermal stability, long endurance (>1011 cycles), and immediate readout with a multifunctional gate (TiN/Mo/TiOxNy/SL-HZO)	陳政凱; Chen, Zheng-Kai
2024-11-12	應用於X頻段互補式金氧半導體F類壓控振器與使用動態體偏壓技術B/C類混合式壓控振盪器暨整數型鎖相迴路之研製;Design and Implementation of CMOS X-Band Class-F Voltage-Controlled Oscillator, Dynamic Body Biasing Technique for Class-B/C Hybrid-Mode Voltage-Controlled Oscillator, and Integer-N Phase-Locked Loop	邱恩芸; Qiu, En-Yun
2024-11-11	適用於多步幅卷積神經網路之比特級稀疏性感知壓縮情境及加速器架構設計;Bit-Level Sparsity-Aware Compression and Accelerator Architecture Design for Multi-Stride Convolutional Neural Networks	黃筠茵; Huang, Yun-Yin
2024-10-22	具自適應且多階資料獨立相位追蹤補償技術之 5 Gbps 半速率時脈與資料回復電路;A 5 Gbps Half-Rate Clock and Data Recovery with Adaptive Multi-level Data Independent Phase Tracking Compensation Technique	蘇姿羽; Su, Tzu-Yu

Showing items 161-170 of 3053. (306 Page(s) Totally) << < 12 13 14 15 16 17 18 19 20 21 > >> View [10|25|50] records per page