研究期間：10108~10207;For solar power technology to increasing popularity, or even replace the existing traditional petrochemical power generation, "efficient" and "low cost" both in goal and become the focus of recent research and development of crystalline silicon solar cells. Amorphous silicon/silicon heterojuction (SHJ) solar cells have recently been a concerned technology caused by warm again in the solar industry, mainly because of SHJ combines the benefits of crystalline silicon and silicon thin film technology. The important factor related with the open circuit voltage of the silicon heterojuction solar cells is the qualities of amorphous passivation layer and its interface between with silicon substrate. Therefore, obtaining a high open circuit voltage, we must have to control the surface quality of silicon and hydrogenated amorphous silicon film from the various technology levels for the fabrication of the silicon heterojuction solar cells. It lead to reduce the recombination velocity of the carrier between its interface. We will sequentially go through the four procedures which are included with wafer selection (CZ&FZ-low doping concentration); wafer surface cleasing (surface oxidation and the oxidation layer removal); interface passivation layer (hydrognated silicon thin films-including α-Si:H、α-SiOx:H、α-SiCx:H); thermal treatment (plasma/microwave), to enhance the effective life time of the minority carriers by the implementation interface passivation processing. We will measure the real the effective life time of the minority carriers by using with the quasi steady state photocondunce method, to optimize the fabriction recipes. And we will verify the enhancement of the open circuit voltage by the fabrication of the planar silicon-base heterojuction solar cells.