研究期間：10108~10207;Photoluminescence is an important inspection method which is non-destructive, contactless and rapid. Therefore, it is ideal of rapid and large quantity solar cell inspection. This project will use high power near IR laser as the pump light source to illuminate Si-based solar cell. Utilizing specially designed filter and highly sensitive CCD camera, we will record the spatial distribution of the photoluminescence signal emitted from the solar cell. Based on the image recorded, the physical, electronic and circuitry properties of the solar cell can then be calculated. These properties include excess carrier density, lifetime, diffusion length, serial resistance, transverse resistance, and defect spatial distribution inside the solar cell measured. The solar cell industry has high demand on as-cut wafer inspection; therefore, research about utilizing photoluminescence to evaluate the spatial distribution of aforementioned physical parameter of as-cut wafer will be performed. These physical, electronics and circuitry properties influence the efficiency and lifespan of the solar cell and even other solar cells’ performances in a module in various aspects. The theoretic part of this project include the establishment of complete carrier physics model, equivalent circuit model and the combination of these two models. These models will not be limited to Si-based solar cell and can be applied to other semiconductor based solar cell inspection application. The experimental part of this project include the photoluminescence system setup, image processing and the programming.
