研究期間：10207~10212;MOCVD is usually used in LED thin film deposition. But there is a common problem about the graphite suceptor because the MO source would etch it to make the susceptor crack. This proposal will solve the problem by using SiC susceptor. The research includes the simulation analysis of the reactor and susceptor: the high uniformity about the reactor flow field, the optimization of MO source usage, the influence about the relative distance in reactor, and the temperature distribution on susceptor. Besides, we use the SiC replacing the original graphite susceptor, and then use the RF coil heating the susceptor by eddy current. Next, we observe the temperature field to find a design which has the smallest thermal stress effect. Finally, we do experiments to verify that this design is reliable. In addition, we also cooperate with Chung-Shan Institute of Science to grow the SiC susceptor, install the susceptor into the reactor, and compare the experiment results with the simulations we did. By these researches, we will develop a SiC susceptor and will use in big-size in the future.
