本研究目的為使用PVD中的濺鍍製程製作矽異質接面太陽能電池，因PVD濺鍍法可以取代CVD法，且沒有汙染環境、高成本等…缺點。但是PVD製程法有其困難之處如：（1）硼摻雜不易、（2）薄膜缺陷較多。故本研究方法為：（1）使用調變硼顆粒面積來改善摻雜不易之問題。（2）使用外加直流偏壓的方式，改善濺鍍中 離子對薄膜轟擊效應所產生之缺陷。 經過P型氫化非晶矽單層膜分析、AMPS-1D軟體模擬、矽異質接面太陽能電池實作。證實增加硼顆粒擺放之面積確實可以改善P層之摻雜量，且外加直流偏壓除了可減少 離子對薄膜轟擊效所產生之微結構，還可以幫助硼原子摻雜進入薄膜。 本研究結果為矽異質接面太陽能電池之製作於擺放多量硼顆粒面積（110度）並施加外加偏壓 時有最高效能，效率最高達到8.8%。; The aim of this research is the fabrication of silicon heterojunction solar cells by the PVD sputtering process. A bias magnetron sputtering process was used to replace the CVD process to prevent the disadvantages of the environmental pollution and the high fabricated cost. However, there are some problems for the sputtering process, such as: (1) Boron is difficult to be doped into the film; (2) There are microstructures and defects within the film during the deposition. In this study, some research methods were applied, such as: (1) Varied boron-particle area to improve the boron doping problem; (2) A DC bias voltage was applied to reduce defects from effect of ion bombardment in the thin film. According to the P-type hydrogenated amorphous silicon monolayer analysis, an AMPS-1D simulation was used to calculate the device based on the actual fabrication of the heterojunction solar cell. When the boron-particle area was increased, the effective dopant of the P-layer was also increased. The applied DC bias can reduce the microstructure caused by the ion bombardment, and also increase the effective doped boron into the film. The results show that a good silicon heterojunction solar cell can be fabricated by using the large amount of boron particle area (110 degrees) and applying a bias voltage . Finally, the efficiency of the solar cell was up to 8.8%.