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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/65113

    Title: 矽基板上的氮化鎵磊晶術:以氧化鎵為緩衝;Growth of GaN on Si with Ga2O3 buffer layer
    Authors: 李柏霆;Lee,Po-ting
    Contributors: 光電科學與工程學系
    Keywords: 氧化鎵;氮化鎵;;緩衝層;Ga2O3;GaN;Si;Buffer layer
    Date: 2014-07-09
    Issue Date: 2014-10-15 14:40:54 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 以矽基板成長氮化鎵可降低氮化鎵光電元件的成本,但由於兩種材料的晶格常數與熱膨脹係數不匹配,需以適當的緩衝層來減輕磊晶層中的應力,本研究以單斜結構β氧化鎵作為氮化鎵在矽基板上的緩衝層,希望能開發出新的磊晶技術。
    ;The growth of GaN on Si can reduce manufacturing cost of nitride-based optoelectronic devices. However, due to the significant mismatch in lattice constant and thermal expansion coefficient mismatch between GaN and Si, we need to use buffer layer to mitigate the strain in GaN epi-layers. This study investigates the possibility of employing monocline β-Ga2O3 as the buffer layer for the growth of GaN on Si.
    The lattice mismatch between β-Ga2O3 and GaN is only 2.6%. In this project, we deposited ZnO/ β-Ga2O3 on Si <111> substrate, and nitridized the oxide layer in high-temperature NH3 ambience in order to attain a thin GaN layer for subsequent epitaxial growth.
    It is found that inserting a ZnO layer between β-Ga2O3 and Si can improve the crystal quality of GaN. The result is attributed to the fact that ZnO thin film can change the surface energy of β-Ga2O3 to facilitate the bonding between Ga and N. The effect of ZnO thickness, annealing time, and NH3 flow rate on GaN epitaxy is analyzed.
    We also grow GaN on ZnO/β-Ga2O3/Si with metal organic chemical vapor deposition. The GaN epi-layer is found be polycrystalline. Methods to enhance the epitaxial qualities are proposed.
    Appears in Collections:[光電科學研究所] 博碩士論文

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