多晶矽和金屬閘極於二維金氧半場效電晶體模擬比較;Comparison Between Polysilicon and Metal Gate in 2D MOSFET Simulation

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/67611

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Title:	多晶矽和金屬閘極於二維金氧半場效電晶體模擬比較;Comparison Between Polysilicon and Metal Gate in 2D MOSFET Simulation
Authors:	梁瀅龍;Liang,Ying-Lung
Contributors:	電機工程學系
Keywords:	矩形網格;元件模擬;金氧半場效電晶體;rectangular mesh;device simulation;MOSFET
Date:	2015-06-30
Issue Date:	2015-07-30 23:38:57 (UTC+8)
Publisher:	國立中央大學
Abstract:	本篇論文中，我們將帕松方程式及電流連續方程式，利用等效電路的方式來設計出二維網格數值元件模擬器，元件的模擬就變成了電路的模擬，不但可以用電路模擬器來做元件模擬，而且可以和一般電路結合，形成混階模擬，接著討論多晶矽閘極和金屬閘極的差異和優缺點，並利用多晶矽閘極模擬的結果和金屬閘極來做比較，最後，我們將討論的主題是用非白努力的電流表示方法，並比較非白努力方程式與傳統白努力方程式上的差異。;In this thesis, we use Poisson’s equation and continuity equations to design an equivalent circuit model for 2-D device simulation. The device simulation will be transformed into the circuit simulation. The simulation will become a mixed-level device and circuit simulation. We discuss the advantages and disadvantages between poly-Si gate and metal gate. And the simulation results of poly-Si gate will be compared with those of metal gate. Finally, the subject to be discussed is the non-Bernoulli equation for current expression. We will compare the Bernoulli method with non-Bernoulli method.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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