在半導體製程中，離子佈植及即隨後退火造成之固態磊晶成長常被利用於形成高濃度摻雜，為了瞭解固態磊晶成長，科學家提出了需多相關的實驗及理論模型嘗試了解其背後的機制，其中廣義費米能階位移理論為最完整發展的理論，利用摻雜物造成的費米能階之位移來解釋固態磊晶成長速度之提升與降低。然而，固態磊晶成長之速度不僅與摻雜物造成的費米能階位移有關，也和由雜質在晶格中所造成之應變有極大的相關性。在已被提出的帶有應變之費米能階位移理論中假設由載體所提供之晶格應變與由和矽原子等價之雜質的應變可直接合併以做成長速度之計算。在本次的研究中，我們利用離子佈植將帶電(磷、砷)與非帶電(碳、鍺)之摻雜物摻雜入矽晶片，並且利用其反射率來研究固態磊晶成長之動力學問題。我們發現碳摻雜物所形成之拉伸應變會對磊晶成長造成明顯的降低，這和先前提出帶有應變之費米能階位移理論中的預測並不符合。我們利用不同半徑大小之帶電(磷、砷)與非帶電(碳、鍺)之摻雜有系統地討論兩者所提供的應變及費米能階之位移，進而了解帶電與非帶電之摻雜在固態磊晶成長之動力學中扮演之角色，最後，我們在本篇論中提出了修正並更成功地描述帶有應變之費米能階位移理論。;The kinetics of solid phase epitaxial regrowth (SPER) is studied in amorphous silicon doping with dopant and isovalent impurities. Samples were co-implanted with phosphorus (P) and arsenic (As) to systematically form different proportion of dopant impurities. Some of samples were additionally implanted with C and Ge to induce tensile and compressive strain in Si. Subsequently all samples were implanted with high dose silicon to result in a continuous amorphous and annealed at 680°C in a vacuum-pumped furnace (~10-3Torr) using a rapid thermal annealing (RTA) system. Simultaneously the SPER dynamics were monitored using in situ time-resolved reflectivity measurement. The played role of strain induced by dopant and isovalent impurities with different atomic sizes disentangled by considering the actual Fermi-level shifting and effective strain induced by partial impurities, as obtained from Hall measurements and high-resolution X-ray diffraction. About 80% P+ ions and 20% As+ ions were activated while 19% C+ were incorporated due to the solubility of doping in Si. Contrary to in the previous model, SPER rate retardation was found in the cases of both isovalent-impurity-induced tensile and compressive strain. This observation shows it’s possible the role of strain is different for dopant and isovalent impurities in SPER. We propose a modified model incorporating strain into generalized Fermi-level shifting to inclusively explain the SPER dynamics.
