P型氮化鎵表面鈍化層在AlGaN/GaN HEMT的高頻功率與高速切換電路應用研究;Algan/Gan Hemts with P-Gan Cap Passivation for Rf Power and Switching Circuits Applications

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/70822

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/70822

Title:	P型氮化鎵表面鈍化層在AlGaN/GaN HEMT的高頻功率與高速切換電路應用研究;Algan/Gan Hemts with P-Gan Cap Passivation for Rf Power and Switching Circuits Applications
Authors:	辛裕明
Contributors:	電機工程學系
Keywords:	電子電機工程
Date:	2016-08-31
Issue Date:	2016-10-11 19:21:51 (UTC+8)
Publisher:	科技部
Abstract:	研究期間：10508 ~ 10607
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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