本論文最主要是探討網狀結構應用於紫外光發光二極體（Light Emitting Diode, LED）的透明導電層、p-GaN層與MQW層之研究，分析每種結構的光電特性，希望提升LED元件的外部量子效率。 第一部份是以平面式ITO透明導電層（Planar ITO）當作基礎，嘗試利用具網狀ITO透明導電層（Meshed ITO）的架構來增加LED元件的外部量子效率，結果發現元件外部量子效率增加了2.5%，光的輸出功率也改善了19.6%，電功率也提升了2.1%，其原因有二，第一是因為Meshed ITO移除掉部分的ITO減少對光的吸收，第二是因為Meshed ITO的幾何形狀破壞了出射光的反射路徑，因而有更多的光可以被萃取出來。 在第二部份實驗，按第一部份相同的原因與理論，我們進ㄧ歩的製作出網狀p-GaN（Meshed p-GaN）結構的元件，希望得到更好的結果，比較起Planar ITO的元件，果然Meshed p-GaN的元件的外部量子效率增加了5%，光的輸出功率也改善了40.5%，電功率也提升了4.4%。 最後我們更製作出網狀的多重量子井結構（Meshed MQW）的元件，比較起Planar ITO的元件，Meshed MQW的元件的外部量子效率增加了6.3%，光的輸出功率也改善了49.8%，電功率也提升了5.5%。我們發現Meshed MQW元件的效率比Meshed ITO好，其原因是Meshed MQW破壞了光在MQW的駐波模式，使得更多的光能被萃取出來。 The purpose of this study was to increase the External Quantum Efficiency(E.Q.E.) of LED by applying meshed structure on Transparent Conduct Layer(TCL)、p-GaN layer and M.Q.W. Layer. In the begging, We fabricated the planar ITO LED then meshed ITO LED. The comparison showed that meshed ITO LED improved 2.5% on E.Q.E.、19.6% on light output power and 2.1% on power efficiency. Analysis showed the reasons were the removed ITO reduces the absorption of light and the meshed structure reduces the reflection light. Secondly, due to the same reasons, we fabricated the meshed p-GaN LED. Compare with planar ITO LED and meshed p-GaN LED, the meshed p-GaN LED improved 5% on E.Q.E.、40.5% on light output power and 4.4% on power efficiency. Finally, We compared again with planar ITO LED and meshed MQW LED. The result showed the meshed MQW LED improved 6.3% on E.Q.E.、49.8% on light output power and 5.5% on power efficiency. However, the reason for the improvement is the meshed MQW obstructed the formation of the standing wave in MQW layer.
