石墨烯是目前備受矚目的新興材料之一，因為其優異的導電性以及高穿透率，是一種可撓曲的透明導電薄膜，可望取代傳統透明導電膜如氧化銦錫(ITO)、氧化鋅鋁(AZO)等。疊層之後的石墨烯能夠有更低的片電阻值，疊層過程當中需要進行轉印，在轉印堆疊時疊層石墨烯容易殘留下轉印輔助層如PMMA等，為了解決有機物殘留問題，需要改善其轉印堆疊的手法。 本研究以一般銅箔進行傳統的疊層方式與直接石墨烯/銅箔疊層轉印方式進行堆疊，其所堆疊出的多層石墨烯在電性表現有些許趨勢，為了驗證直接石墨烯/銅箔疊層轉印法的可行性，利用原子力顯微鏡觀察銅箔表面分析不同銅箔的表面粗糙平整度；利用霍爾量測儀量測疊層石墨烯電性；利用拉曼光譜儀分析疊層石墨烯之品質。利用電鍍銅箔所生長之單層石墨烯比起一般銅箔有著較佳的品質，其片電阻值為426 Ω/sq；載子濃度為9.13×1012 cm-2 ；電子遷移率為1603 cm2/V-s，利用其低表面粗糙平整度與良好之電性進行直接石墨烯/銅箔轉印法堆疊，驗證了此疊層轉印法之可行性。 ;Graphene is one of the highly anticipated new material, because of its excellent electrical conductivity and high transmittance. It is a flexible transparent conductive film, and it is expected to replace the conventional transparent conductive film such as indium tin oxide (ITO), aluminum zinc oxide (AZO) , etc.. Stacking graphene can get a lower sheet resistance value. Graphene need to be transferred in the lamination process. When graphene is transferred in the lamination process, the transfer assist layer such as PMMA, etc. is difficult to be removed completely. In order to solve the problem of residual organics, it is necessary to improve the method of graphene lamination process. In this study, we use two lamination transfer method on the general copper foil. The electrical properties of stacked multi-layered graphene show a trend slightly. In order to verify the method of direct-graphene/copper foil lamination transfer, we use an atomic force microscope to analyze the surface roughness of copper foil; using Hall measurement instrument to measure the electrical property of graphene; using Raman spectroscopy instrument to analyze the quality of graphene. The the electrical property of graphene grown on electroplating copper foil is better than general copperfoil, its sheet resistance value is 426 Ω / sq; carrier concentration is 9.13 × 1012 cm-2 ; mobility is 1603 cm2 / V-s .With the low surface roughness and good electrical property of graphene grown on electroplating copper foil, we verify the feasibility of the laminate transfer method.
