近幾年來，人們給於二氧化釩很大的重視，因其獨特的可逆性金屬非金屬相轉換(metal insulator transformation )，隨著溫度上升，二氧化釩從非金屬或半導體轉換成金屬態，使其電阻大幅的下降，紅外光穿透值也有顯著地變化，使其在電子元件與光學元件領域中，有很大的潛力。 本實驗於水熱釜中以水熱法的方式在單晶氧化鋁上合成B相與M相二氧化釩，並以XRD分析其為單晶薄膜，而在反應之前，另外於水熱釜中通入氮氣使其壓力上升，控制該壓力進而直接改變二氧化釩成長並得到不同形貌的薄膜，也透過控制不同釩濃度，得到不同形貌之薄膜，最後將試片置入爐管中在氮氣氛圍下退火，並用XRD分析出其為會隨溫度發生相轉換的M相二氧化釩，將試片加熱觀察其溫度與電阻的變化約3個數量級。在磊晶側向成長法(ELOG)氮化鎵上，成功地定位成長二氧化釩薄膜，並解釋其可能機制。 ;In recent years, people give great attention to vanadium dioxides, because of its unique reversible metal non-metallic phase transformation. With the temperature rising, vanadium dioxides gradually converted from insulator to metal, so that the resistance dropped significantly, infrared light penetration value also significantly changed, which make it a great potential in the field of electronic and optical device. In this experiment, the B-phase and M-phase vanadium dioxides thin films were successfully synthesized on the sapphire by hydrothermal method in autoclave and the films were analyzed by XRD. In addition of nitrogen, made pressure rise and then changed the growth and morphologies. Finally, the sample was placed in a furnace tube and annealed in a nitrogen atmosphere, and we could get M phase vanadium dioxides which were defined by XRD diffraction peak. The change of resistance was observed and the resistivity decreased to 3 orders. Besides, a successful patterning and the growth of vanadium dioxide film were carried out and described probably mechanism.
