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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/75044

    Title: 電漿診斷系統輔助化學氣相沉積之鈍化層薄膜製程區間研究
    Authors: 余明倫;Yu, Ming-Lun
    Contributors: 機械工程學系
    Keywords: 電漿輔助化學氣相沉積;氫化非晶矽薄膜;PECVD;OES;a-Si:H
    Date: 2017-07-25
    Issue Date: 2017-10-27 16:17:53 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本研究於自製電漿輔助化學氣象沉積系統利用光放射光譜端點檢測以進行異質接面太陽能電池用氫化非晶矽鈍化薄膜之適用製程研究。透過電漿診斷及硬體回饋以即時提供電漿變化趨勢,大幅減少不必要之製程測試實驗,而縮短製程開發成本。
    ;In this study, the process of hydrogenated amorphous silicon (a-Si:H) thin films for application in heterojunction with intrinsic layer (HIT) solar cell is prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The characterization of plasma process is studied by using Optical emission spectrometer (OES). The passivation quality of a-Si:H thin films was determined by photo-conductance lifetime tester and the microstructure factor of the films was determined by Fourier-Transform Infrared Spectrometer (FTIR).
      The results show that the surface passivation is affected by the state of plasma. According to stability of SiH*, the plasma reaction can be defined as stable state and transient state. The value of SiH* is much higher in the transient state than in the stable state. It means that the SiHX concentration are much higher when the plasma state is in transient state. On the other hand, the ratio of Hβ/Hα can be defined as an electronic temperature (Te). In the transient-state plasma, the electronic temperature is higher and it indicates the ion bombardment get stronger. With the stronger ion bombardment, the damage between the silicon wafer and the passivation layer is greater. 
      Therefore, the change of plasma state can be used to diagnose and monitor the plasma processing condition and use it to receive an immediate process feedback afterwards. We can cut down the unnecessary process step time and reduce the cost of the research.
    Appears in Collections:[機械工程研究所] 博碩士論文

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