在本研究中，我們利用奈米球鏡微影術(nanosphere-lens lithography )與二次蝕刻技術製作氮化鎵(GaN)發光二極體(LED)奈米柱(nanorod)陣列。奈米球鏡微影術能以低成本的方式製作大面積的奈米結構陣列，不需要使用昂貴的電子束微影製程(E-beam Lithography)、極紫外線(Extreme Ultraviolet, EUV)的黃光微影製程。除了成本低廉之外，許多研究團隊發現奈米結構會影響氮化鎵發光二極體的光電特性，例如偏振方向，奈米柱的幾何形狀與量子井發光的偏振方向有密切的關係。;Gallium nitride (GaN) nano-rod light emitting diodes (LEDs) have been an attractive research topic because of their enhanced light extraction efficiencies and other unique electro-optical properties. In this project, we fabricate GaN nano-rod LED arrays with nanosphere-lens lithography (NLL) and a two-step etching technique. The NLL technology is a low-cost approach to fabricate large-area nanostructure arrays, without resorting to expensive facilities, e.g. e-beam lithography and extreme ultraviolet (EUV) lithography process.
