不同製備方式氧化矽薄膜應用於矽晶太陽能電池之鈍化接觸層研究;Use Different Methods to Grow Silicon Oxide Thin Film for Passivated Contact on Silicon Solar Cell

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题名:	不同製備方式氧化矽薄膜應用於矽晶太陽能電池之鈍化接觸層研究;Use Different Methods to Grow Silicon Oxide Thin Film for Passivated Contact on Silicon Solar Cell
作者:	黃志偉;Huang, Chih-Wei
贡献者:	光電科學與工程學系
关键词:	鈍化接觸;氧化矽;濕式化學氧化法;矽晶太陽能電池;passivated contact;silicon oxide;wet chemical oxidation method;silicon solar cell
日期:	2017-07-26
上传时间:	2017-10-27 17:18:09 (UTC+8)
出版者:	國立中央大學
摘要:	在矽晶太陽能電池中表面鈍化一直是設計以及優化的重要的目標，從早期的只有背電場的鈍化，到後來研究者開始研究正面氮化矽鈍化，當正面鈍化已經研究完善時，研究者又開始把目標轉移到另一個嚴重的複合區域—電池的背表面。在90年代，新南威爾斯大學(UNSW)開始引入介質層的鈍化局部開孔的PECR/PERL等設計，解決了背面的鈍化的問題，但開孔處嚴重的複合速率(Recombination Rate)還是無法解決，因此開始有研究希望能夠解決開孔問題，鈍化接觸(Passivated Contact)的技術開始被提出。本研究利用濕式化學氧化法(Wet chemical oxidation)、光化學氧化法，電漿輔助化學氣相沉積法，在氧化矽薄膜上堆疊氮化矽薄膜，量測矽晶片載子生命週期(lifetime)，其中以濕式化學氧化法載子生命週期442 us鈍化效果最好，利用傅立葉轉換紅外光譜(FTIR)，從圖譜可以得知在1080 cm-1的位置證明有氧化物Si-O-Si(stretching)鍵結。本研究將針對濕式化學氧化法來生長氧化矽薄膜，調變不同的參數條件，搭配熱處理，載子生命週期可以提升至1108 us，探討薄膜鈍化的特性，找出結構緻密性較高以及較低的漏電流密度的氧化矽薄膜。最後將氧化矽薄膜應用於矽晶太陽能電池上，和無氧化矽鈍化薄膜的矽晶太陽能電池做光電轉換效率比較，最後得到具鈍化接觸層的矽晶太陽能電池開路電壓從原本551 mV提升至625 mV(上升13 %)、短路電流29.8 mA、填充因子0.59，效率能從10.8 %提升至11.5%。 ;In the silicon solar cell surface passivation has always been an important goal of design and optimization. In the early, the back electric field passivation has been stuided, and later researchers began to study the positive silicon nitride passivation, when the front passivation has been studied, the researchers also began to move the target to another serious compound area - the back surface of the cell. In the 1990s, the University of New South Wales (UNSW) began to introduce passivated PECR / PERL design of the dielectric layer to solve the problem of passivation on the back, but the serious recombination rate at the opening can not be resolved, so began to study hope to be able to solve the opening problem, passivated contact technology began to be raised. In this study, silicon nitride film was deposited on silicon oxide films by wet chemical oxidation, photo-oxidation oxidation and plasma enhance chemical vapor deposition. The lifetime of silicon wafer was measured. FTIR can be seen from the figure that the position of the Si-O-Si bonding at the position of 1080 cm-1 by the wet chemical oxidation method. In this study, the silicon oxide film was grown by wet chemical oxidation method, and the change of different parameters. With the heat treatment, the lifetime can be increased to 1108 us, and the characteristics of film passivation were discussed. To find a structure of high density and low leakage current density of silicon oxide film. Finally, the silicon oxide film was applied to the silicon solar cell, and the silicon solar cell with no silicon oxide film is compared with the photoelectric conversion efficiency. The open-circuit voltage of the silicon solar cell with the passivation layer was increased from the original 551 mV to 625 mV (up 13%), short circuit current 29.8 mA, fill factor 0.59, efficiency from 10.8% to 11.5%.
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