剪切力溶液製程應用於高效能有機薄膜電晶體：含硒碳鏈聯噻吩小分子半導體材料;Selenium-Alkyl Bithiophene(SeBT)-Based Small Molecular Semiconductors via Solution Sheared Method for High-Performance Organic Thin-Film Transistors

NCUIR > Engineering College > National Central University Department of Chemical & Materials Engineering > Electronic Thesis & Dissertation > Item 987654321/76682

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/76682

Title:	剪切力溶液製程應用於高效能有機薄膜電晶體：含硒碳鏈聯噻吩小分子半導體材料;Selenium-Alkyl Bithiophene(SeBT)-Based Small Molecular Semiconductors via Solution Sheared Method for High-Performance Organic Thin-Film Transistors
Authors:	林珈琪;LIN, Chia-Chi
Contributors:	化學工程與材料工程學系
Keywords:	溶液製程;剪切力塗佈;有機小分子半導體材料;有機薄膜電晶體;OTFT;solution shearing;organic small molecule semiconductor
Date:	2018-08-02
Issue Date:	2018-08-31 11:33:12 (UTC+8)
Publisher:	國立中央大學
Abstract:	本研究利用溶液製程並透過剪切力塗佈法製作有機薄膜電晶體元件，主要研究於有機薄膜層，由於之前實驗室製作含硫碳鏈之p-type有機小分子材料SBT，有機薄膜元件電性達1.7 cm2V-1s-1。本研究將硒取代硫原子運用不同鍊長的含硒碳鏈之聯噻吩(selenylated bithiophene; SeBT)為核心，核心頭尾兩端接上三併環噻吩(2,6-di(dithieno[3,2-b;2’,3’-d]-thiophen-2yl; DDTT）為主軸，合成本研究使用得P-type有機小分子半導體材料DDTT-SeBT-C6、DDTT-SeBT-C10及DDTT-SeBT-C14。隨著含硒碳鏈長的增加，載子遷移率從DDTT-SeBT-C6 0.09 cm2V-1s-1，增加至DDTT-SeBT-C10 0.06 cm2V-1s-1，再增加至DDTT-SeBT-C14 4.01 cm2V-1s-1，並利用光學顯微鏡、原子力顯微鏡等儀器分析其表面形貌。其中，DDTT-SeBT-C6薄膜呈現不連續狀，DDTT-SeBT-C10從GIXRD可發現結晶性不佳，所以造成電性不佳，反之，DDTT-SeBT-C14表面形貌呈現連續性且結晶性佳，得到優異的電性表現載子遷移率4.01 cm2V-1s-1，我們利用單晶可知，當側鍊較長時，可改善主軸扭轉角使分子呈平面性提高載子遷移率。 ;This study research new small molecule semiconductors via solution shearing manufacture organic thin film transistors. Owing to the previous work thio-alkyl substituted bithiophene (SBT), the organic thin film transistor electrical properties is 1.7 cm2V-1s-1. The series of new small molecules is selenylated bithiophene with different alkyl side chains. Then, add 2,6-di(dithieno[3,2-b;2’,3’-d]-thiophen-2yl (DDTT) to become the main backbone on the both side of the core. As the carbon length increase, the carrier mobility increases from DDTT-SeBT-C6 0.09 cm2V-1s-1 to DDTT-SeBT-C14 4.01 cm2V-1s-1. The surface morphology was analyzed by optical microscopy, atomic force microscopy, grazing incidence x-ray diffraction, UV-vis spectrophotometer. In these three molecules, the morphology of DDTT-SeBT-C6 is discontinuity. The crystallinity of DDTT-SeBT-C10 is worse. That the reason why they get the poor electrical properties. However, the morphology of DDTT-SeBT-C14 is continuity and the high crystallinity. When the side length increase, the torsion angle can be improved to make the backbone planar to improve the carrier mobility.
Appears in Collections:	[化學工程與材料工程研究所] 博碩士論文

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