一維矽基奈米結構因其獨特的光學性質及應用潛力使其在先進光電領域中受到很大的關注。本研究中，我們成功提出一種全新的製程，結合氧氣電漿修飾奈米球微影術及金催化蝕刻，成功於室溫下在(001)矽基材上製備出規則準直排列且深度、長度、間距可控之一維矽奈米洞及矽奈米管。在不同實驗條件下所製備出之準直矽奈米洞及矽奈米管陣列，其表面形貌、晶體結構及形成機制皆有系統地透過原子力顯微鏡、掃描式電子顯微鏡及穿透式電子顯微鏡進行探討。而藉由紫外光-可見光-近紅外光的量測分析，可清楚地發現研究中所製備出之矽奈米洞及矽奈米管陣列，在400到1700奈米的波長範圍中具有優異的光吸收性質。本研究藉由調控奈米球遮罩之直徑及金催化蝕刻條件，可準確的控制矽奈米洞及矽奈米管之直徑、長度及深度，並證實了這裡所提出之製備一維有序矽基中空奈米結構之新穎方法是可行的。;One-dimensional (1D) silicon-based nanostructures have recently attracted remarkable attention due to their unique optical properties and potential applications in advanced optoelectronics. In this study, we show the successful fabrication of periodic arrays of vertically-aligned, depth-, length-, spacing-controllable 1D Si nanoholes and Si nanotubes on (001)Si substrates at room temperature using our proposed new approach, which is based on the O2 plasma modified nanospherre lithography and Au nanodisk-catalyzed etching process. The surface morphology, crystal structure, and formation kinetics and mechanism of the vertical Si nanohole and Si nanotube arrays produced under different experimental conditions have been systematically investigated by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. UV-Vis-IR spectroscopic measurements clearly revealed that the produced Si nanohole and Si nanotube arrays exhibited excellent broadband absorption properties in the wavelength range of 400-1700nm. Since the diameter and length (or depth) of the Si nanohole and Si nanotube can be readily controlled by adjusting the diameter of the colloidal nanosphere template and the Au-catalyzed etching conditions, the new strategy proposed in this study makes the fabrication of a variety of periodic arrays of 1D Si-based hollow nanostructures viable.
