本研究計畫的創新之處及主要目的有二:一、 開發於真空環境下以真空紫外光(vacuum ultraviolet, VUV, < 180 nm)激發產生高活性氧原子自由基並應用於進行直接氧化成長一維金屬氧化物奈米線(nanowires, NWs)，據我們所知尚無相關文獻報導。二、 探討真空環境下氧原子自由基對奈米金屬顆粒氧化行為之影響；並調控直接氧化成長之奈米線結構及形貌。 雖然已有文獻提及電漿製程中氧自由基對奈米金屬氧化物成長之影響，然而電漿環境下有氧離子、氧自由基、離子轟擊等成長影響因子，難以釐清氧自由基對氧化物成長行為的實際影響程度；此外，但電漿環境中的離子轟擊現象，對於基板表面易造成表面缺陷與損傷，不利應用於軟性電子元件製作。本計畫擬以兩年時間進行製程開發研究: 第一年選擇具有良好光電性質的氧化銦(In2O3)作為研究材料，首先將利用172 nm的VUV光源進行直接氧化成長In2O3-NWs並建構成長模型。此外，也將比較本實驗室在低溫電漿直接氧化成長之實驗結果，以釐清氧原子自由基在直接氧化製程中對銦奈米顆粒氧化行為之影響。第二年將採用不同紫外光波長產生不同活性的氧原子自由基；並探討其對銦金屬奈米顆粒的氧化行為影響及分析生成氧化物之顯微結構；並藉由變化氧原子濃度/氧氣分壓與基板溫度等成長參數調控In2O3-NWs成長製程。 ;The objectives of this project are as follows,1. Growth of metal oxide nanowires will be carried out by direct oxidation of metal nanoparticles using highly-active atomic oxygen free radicals produced by vacuum ultraviolet (VUV) lamp radiation.2. The oxidation behaviors of metal nanoparticles (such as oxidation rate, growth direction of the metal oxide) by atomic oxygen will be investigated.One-dimensional metal oxide nanomaterials are promising as one of the key materials of optoelectronic devices and sensors, especially for flexible electronics in the future. In this 2-year project, we will develop a direct oxidation technique for growth of indium oxide nanowires (In2O3-NWs) on glass substrates. In the first year, we are going to study growth of In2O3-NWs by direct oxidation of indium nanoparticles on substrates by atomic oxygen produced using 172 nm VUV light, and investigate the influence of atomic oxygen free radicals on the oxidation behaviors. The mechanism of NW growth will be proposed by analysis of physical properties (microstructure and optical properties) of as-grown nanowires. In the second year, we will take a further step to fabricate In2O3-NWs by different atomic oxygen species. Furthermore, we will optimize process parameters for NW growth, in doing so the morphology and microstructure of In2O3-NWs are expected to be well-controlled.
