針對第五代(5G)行動通訊頻寬的需求，將載波頻率提升至毫米波是未來的趨勢，因此，世 界各國的研發團隊已紛紛投入相關研究。5G系統基地台之功率放大器也勢必更大幅地改用具 效率高、體積小優點的氮化鎵功率電晶體。目前的氮化鎵功率電晶體是以氮化鋁鎵/氮化鎵異 質結構為主，然而受限於其氮化鋁鎵的成分與厚度，高頻特性有所限制。在此計晝中，我們擬 以低界面應力的氮化鋁銦/氮化鎵異質結構來取代傳統的氮化鋁鎵/氮化鎵結構，藉由此新結構 特有的高濃度二維電子氣來降低電晶體通道電阻，提高電流密度。此計晝將以矽基板上0.1微 米T型閘極電子遷移率電晶體為研發載具，進行磊晶技術，製程技術與封裝技術之開發，並 展示10 W級Ka頻段(30 GHz)之功率電晶體。 ;In response to the demand of bandwidth of future 5th generation mobile communications, moving the carrier frequency to millimeter wave range has been considered a feasible solution and pursued by several research groups worldwide lately. The power amplifiers in base station of 5 G system are expected to be dominated by GaN-based power transistors, which have the merits of high efficiency as well as high power density. Up to date, GaN power amplifiers based on AlGaN/GaN heterostructure are the products available in the market. However, their performance is limited by the composition and thickness of the AlGaN layer. In this project, we propose an AlInN/GaN heterostructure, which has low stress and high two dimensional electron gas density for high current density operation, to replace the conventional AlGaN/GaN counterpart. Using 0.1 um T-gate high electron mobility transistor on Si substrate as the development vehicle for epitaxy, fabrication and packaging technologies, 10 W Ka-band (30 GHz) power transistors will be demonstrated.
