總計畫暨子計畫一：氮化鎵材料之磊晶開發和元件可靠度分析與模型建立( I );Gan Epitaxial Development, Devices Reliability and Modeling( I )

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Title:	總計畫暨子計畫一：氮化鎵材料之磊晶開發和元件可靠度分析與模型建立( I );Gan Epitaxial Development, Devices Reliability and Modeling( I )
Authors:	辛裕明;綦振瀛
Contributors:	國立中央大學電機工程學系
Keywords:	氮化鎵;可靠度;元件模型;轉換器;換流器;GaN;Reliability;Modeling;Inverter;Converter
Date:	2018-12-19
Issue Date:	2018-12-20 13:49:09 (UTC+8)
Publisher:	科技部
Abstract:	[總計畫]總計畫目標規劃達成採用寬能隙元件(GaN HEMT)建構的高功率轉換器/換流器(converter/inverter)系統，分別採用表面安裝封裝元件和積體化來達成高效率高功率密度目標。計劃執行與業界合作密切，跟磊晶公司(晶元光電和環球晶圓)，元件製程公司(漢磊，新唐科技)，功率元件公司(大中積電公司)，系統應用公司(台達電)等有密切的合作。目前GaN功率元件相關技術已經成功於新唐以及漢磊兩家代工廠進行六吋量產片試運行，計畫執行可以成功銜接研發的新元件與量產生產，使整合型計劃能夠具有接軌國際指標的能力，並達成計畫目標。子計畫一提供子計畫二和三的新穎元件磊晶片，包括6吋矽晶片和SOI晶片以及GaN基板的磊晶。子計畫二和三根據子計畫四和五的電路設計提供200/650 V元件，包括水平的GaN HEMT和低電流GaN SBD，以及垂直的大電流GaN SBD和GaN FET，而子計畫四和五的轉換器/換流器研發採用子計畫一的元件Spice模型來進行設計。最後規劃的系統目標是3 kW/1 MHz高功率密度諧振轉換器和3 kW高功率密度雙向併網型太陽能換流器。子計畫五更進一步利用GaN HEMT和SBD元件積體化完成高速GaN低側/高側電壓驅動晶片與功率元件整合。[子計畫一]子計畫一目標規劃朝三個方向進行，分別是氮化鎵材料之磊晶開發，氮化鎵元件測試(可靠度分析)，和元件模型建立。除提供子計畫二和三的新穎元件磊晶片，包括在6吋矽晶片和SOI晶片以及GaN基板的磊晶外。也將探討新穎結構與材料之磊晶技術，協助我國業者突破國外競爭者之專利，追求更佳之元件特性，並解決目前GaN HEMT之可靠性問題。在元件可靠度分析部分則進行漏電流和崩潰電壓研究、關閉後之動態導通電阻、高正閘極偏壓/溫度下的穩定性、發生在汲極到基板間的垂直崩潰現象，和短路能力或是在硬開關(hard-switching)時穩定性。最後建立新型Spice元件模型，提供子計畫四和五的轉換器/換流器研發。元件模型包括靜態I-V和C-V特性曲線、動態double pulse測試特性、I-V熱效應特性、和封裝元件的雜散電感效應。 ;Main project was proposed to develop high-efficiency high-frequency high-integration converters and inverters using GaN based devices. There are 5 sub-projects from different groups to support the main project including (1) material growth, device characterization, and device Spice modeling, (2) Lateral GaN HEMT on 6-inch Si and SOI substrates, (3) Vertical GaN SBD and HFET on GaN substrates, (4) Novel converters and PV inverters using discrete surface mounted GaN HEMTs, and (5) Integrated GaN HEMTs for converters and inverters. Other than the academic groups to investigate, several companies related to this power electronics were involved and invited to work together to make the project true and commercialize possible. As for the sub-project I, the research and development will focus on three major sections including material growth, device reliability, and device modeling. Except providing epitaxial growth on 6-inch Si, SOI, and GaN substrates, the study focus on eptixial growth and develop to improve device breakdown characteristics, and reliability issues. Device reliability focused on the leakage current and breakdown characteristics, dynamic on-resistance, forward gate bias stability, short circuit capability and hard switching transient. Device modeling will deliver Spice models including static IV/CV, double pulse, thermal coupling, and parasitic inductance capability.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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