本實驗將開發旋轉塗佈摻雜(spin-on dopant, SOD)擴散製程，並應用於製作N型PERT雙面太陽能電池，藉由兩次擴散驅動溶質(硼、磷)進入矽晶格形成電池射極 (Emitter) 與背表面電場 (Back surface field, BSF)，相較於傳統的氣體擴散源(BBr3或POCl3)製程，SOD製程技術具有成本低、製程速度快等優點；此外也不具有毒性可提高生產線運作的安全性。 首先我們對溶劑成分進行調配，初始先在小尺寸基板上開發出能均勻析出之溶劑，接著配合塗佈時轉速配置使其在5x5 cm2面積上也可達到均勻化，並探討擴散製程參數如氣氛、時間、濃度與溫度達其最佳化，製作出具低電阻率Emitter與BSF層並有效降低其少數載子複合。 最終我們結合所探討的條件條件，將其結果應用於太陽能電池元件上，得到太陽能電池轉換效率(η) = 12.8 %；開路電壓 (Voc ) =579.99 mV；短路電流 (Jsc) = 34.53 mA/cm2；填充因子 (FF) = 63,9 %。 ;In this experiment, we have developed a spin-on dopant (SOD) diffusion technique for fabrication of n-type passivated emitter and rear cell (PERC) solar cells. Compared with traditional diffusion of gases dopant (BBr3 or POCl3), SOD technique could lower the manufacturing cost and improve production efficiency. Furthermore, it is not toxic which can raise safety on production line. We first adjusted component ratio of dopant source, which can be spreaded on a small-sized substrate uniformly. Then we explore the rotation speed of spin coating to achieve uniformity of sheet resistance on 5x5 cm2 and investigate the parameters of diffusion such as atmosphere, time, concentration and temperature to get low sheet-resistance and high lifetime. Finally, we fabricated monocrystalline N-type silicon solar cell base on optimized conditions and the electro-optical convertion efficiency = 12.8 % ; the open-circuit voltage (Voc) = 579.99 mV, short-circuit current density (Jsc) = 34.53 mA/cm2 and the fill factor (FF) = 63.9 %.
