本研究期望利用電鍍法製作銅蝕刻遮罩，並藉由濕式蝕刻法，在PI基板上蝕刻出30 μm之圓孔且taper angle趨近於0.，並探討在蝕刻中加入水刀、水刀前淨泡蝕刻液、蝕刻時間對PI開孔以及蝕刻輪廓之影響。 本研究結果顯示： (1) 在蝕刻中加入水刀裝置可使蝕刻錐角較為垂直，但不影響蝕刻速率。(2) 水刀前浸泡腐蝕液，使PI有些微侵蝕的效果，在定溫、定壓下，蝕刻時間為影響蝕刻輪廓的主要因素，水刀與前浸泡搭配出接近的時間可得類似的蝕刻輪廓。當蝕刻時間增加時，PI基板側面蝕刻輪廓由原本的倒梯形，因回蝕的現象發生逐漸轉變尖嘴狀，隨著回蝕不斷發生蝕刻輪廓再逐漸轉變為正梯形，隨後不斷往側面蝕刻。(3)在85.的條件下，前浸泡10sec.+過水刀8次可以得到較理想的蝕刻輪廓，其taper angle為28.。利用乾蝕刻短時間修飾濕蝕刻之試片，可減少taper angle約12.，使輪廓較為垂直。(4)蝕刻後的試片Cpk值為0.98，在製程能力上仍需改善均勻性。;This study expects to fabricate 3D arrays Φ30μm micro holes on the flexible PI substrate by wet etching and discuss the effect of injection times of nozzle, immersion the etching solution before injection nozzle and the etching time to the etching profile. The results are as follow: (1) Adding the nozzle to the process can make the etching profile more vertical,but doesn’t affect the etching rate.(2)Immersion the etching solution before the nozzle injection makes the PI substrate slightly erosive, the etching time is the main factor affecting the etching profile, that means at the constant temperature and pressure, using different combination of injection times and previous immersion times can make a similar etching profile, when the etching time increases, the etching profile changes from inverted trapezoid into a trapezoid, because the etching happens from the bottom.(3) under the condition of 85.C, previous immersion 30s and 6 times of nozzle injection can get the ideal etching profile, its taper angle is about 28.. Using dry etching to modify the wet etched sample in 6mins can reduce the taper angle about 12..(4)The Cpk value is 0.98, that means the uniformity of the holes needs to be improved .
