中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/83477
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 41658129      線上人數 : 1636
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/83477


    題名: 以濕蝕刻法於可撓性聚亞醯胺基板製作微通孔之研究;Fabrication of Micro-through holes by wet etching on Flexible Polyimide Substrate
    作者: 陳俊宇;Chen, Chun-Yu
    貢獻者: 材料科學與工程研究所
    關鍵詞: 聚亞醯胺;濕式蝕刻法;微通孔;polyimide;wet etching;micro through hole
    日期: 2020-07-22
    上傳時間: 2020-09-02 15:43:09 (UTC+8)
    出版者: 國立中央大學
    摘要: 本研究期望利用電鍍法製作銅蝕刻遮罩,並藉由濕式蝕刻法,在PI基板上蝕刻出30 μm之圓孔且taper angle趨近於0.,並探討在蝕刻中加入水刀、水刀前淨泡蝕刻液、蝕刻時間對PI開孔以及蝕刻輪廓之影響。
    本研究結果顯示: (1) 在蝕刻中加入水刀裝置可使蝕刻錐角較為垂直,但不影響蝕刻速率。(2) 水刀前浸泡腐蝕液,使PI有些微侵蝕的效果,在定溫、定壓下,蝕刻時間為影響蝕刻輪廓的主要因素,水刀與前浸泡搭配出接近的時間可得類似的蝕刻輪廓。當蝕刻時間增加時,PI基板側面蝕刻輪廓由原本的倒梯形,因回蝕的現象發生逐漸轉變尖嘴狀,隨著回蝕不斷發生蝕刻輪廓再逐漸轉變為正梯形,隨後不斷往側面蝕刻。(3)在85.的條件下,前浸泡10sec.+過水刀8次可以得到較理想的蝕刻輪廓,其taper angle為28.。利用乾蝕刻短時間修飾濕蝕刻之試片,可減少taper angle約12.,使輪廓較為垂直。(4)蝕刻後的試片Cpk值為0.98,在製程能力上仍需改善均勻性。;This study expects to fabricate 3D arrays Φ30μm micro holes on the flexible PI substrate by wet etching and discuss the effect of injection times of nozzle, immersion the etching solution before injection nozzle and the etching time to the etching profile.
    The results are as follow: (1) Adding the nozzle to the process can make the etching profile more vertical,but doesn’t affect the etching rate.(2)Immersion the etching solution before the nozzle injection makes the PI substrate slightly erosive, the etching time is the main factor affecting the etching profile, that means at the constant temperature and pressure, using different combination of injection times and previous immersion times can make a similar etching profile, when the etching time increases, the etching profile changes from inverted trapezoid into a trapezoid, because the etching happens from the bottom.(3) under the condition of 85.C, previous immersion 30s and 6 times of nozzle injection can get the ideal etching profile, its taper angle is about 28.. Using dry etching to modify the wet etched sample in 6mins can reduce the taper angle about 12..(4)The Cpk value is 0.98, that means the uniformity of the holes needs to be improved .
    顯示於類別:[材料科學與工程研究所 ] 博碩士論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML188檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明