相較於多孔石墨烯，邊界態氮摻雜的多孔石墨烯在高質量負載時的比電容值可增加49.0%且擴散係數也提升了44.4%，且經過15000次的循環測試之後仍可保有高於99%的電容維持率，另外在BET分析中氮摻雜石墨烯的比表面積提升了兩倍以上，且孔隙的尺寸分布也較氮摻雜前更廣。本研究證實氮摻雜可以在不破壞原有特性的情況下有效的提升多孔石墨烯的電化學表現，同時也探討了邊界態氮改質的多寡對氮摻雜多孔石墨烯儲能表現的影響。 ;N-doped holey graphene is promoted to solve the main issue of graphene for supercapacitor such as volumetric and gravimetric also the ion-transport mobility. This work proposed two strategies to synthesis N-doped holey graphene with ammonia (NH3) as N-doped precursor. This first strategy, the holey graphene (HG) synthesized by rationally design of the Cu nano catalyst in the annealing method, then the N-doped holey graphene (N-EHG) is produced by post annealing HG in NH3 gas. The second strategy is proposed by post-annealing treatment of Cu nano catalyst/graphene (Cu-Graphene) in NH3 gas to produced N-doped graphene (N-BHG). Both N-EHG and N-BHG resulted the holey graphene, the edge N-doping (pyridinic and pyrrolic) graphene and graphitic type of N-doping. However, the N-EHG achieved higher surface are up to 509.03 m2/g (2-fold higher than HG) than N-BHG 264.65 m2/g. Also the pore size distribution of N-HG is larger than HG and N-BHG. In the electrochemical application, the N-EHG demonstrated higher specific capacity up to 449.2 mF/cm2 that 49.0% higher than HG (404.2 mF/cm2). In the stability test, the N-EHG could maintain 99% capacity after more than 15,000 cycles retention testing. The diffusion coefficient of N-EHG is increased 44.4% then HG in the high mass loading (15 mg/cm2) that indicate excellent ionic transport. Finally, our method was effectively to synergetic holey and N-doped graphene that a low-cost, highly efficient for supercapacitor application.
