曝光機在半導體製程中扮演重要的一環，要將曝光機達到低不均勻度和高光學利用率，不只在光學設計上有難度，在石英光學元件上的製作也不簡單。首先，本論文針對不同石英陣列透鏡參數來分析其光學特性與影響，在考量其光學特性與製成的能力後，選定最符合需求的石英透鏡陣列參數，並以達到市面上曝光機的規格要求進行設計。 本論文所設計與驗證之石英透鏡陣列通過市售上曝光機的規格要求，最後完成的有效面積為220 × 220 mm2、最高照度24 mW/cm2、不均勻度3.2 %和曝光系統準直角為1.7?，且光學利用率達50%。 ;Mask aligner is an important equipment in semiconductor industry. To implement Mask aligner in a mask aligner is a new trend, but is not easy, because high uniformity and high optical utilization efficiency are difficult to achieve. First, this paper analyzes the optical characteristics and effects of different quartz array lens parameters. After considering its optical characteristics and manufacturing capabilities, select the most suitable quartz lens array parameters to design for the specifications of Mask aligner on the market. The quartz lens array designed and verified in this paper has passed the specifications of Mask aligner, Efficiency Area is 220 × 220 mm2、Maximum irradiance is 24 mW/cm2、Non-uniformity is 3.2 %、Collimation Half Angle is 1.7? And the optical utilization factor achieve 50%。
