磁控濺射法製備氧氮化釩薄膜的製備和表徵;Fabrication and Characterization for Vanadium Oxynitride Thin Films by Magnetron Sputtering

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题名:	磁控濺射法製備氧氮化釩薄膜的製備和表徵;Fabrication and Characterization for Vanadium Oxynitride Thin Films by Magnetron Sputtering
作者:	丁晨昕;Papina, Iuliia
贡献者:	國際永續發展碩士在職專班
关键词:	氧氮化?;氮化?;氧化?;薄膜;磁控?射;快速?退火;Vanadium oxynitride;Vanadium nitride;Vanadium oxide;Thin film;Magnetron sputtering;Rapid thermal annealing
日期:	2021-08-04
上传时间:	2021-12-07 12:17:22 (UTC+8)
出版者:	國立中央大學
摘要:	氧氮化釩 (VNxOy, x+y=1) 是一種介於氧化釩 (VO, V2O3, V2O5) 和氮化釩 (VN) 之間的金屬化合物，具有有趣的特性和功能，可用於不同的應用。在這項研究中，使用 V 靶，Ar 作為等離子體載體，N2 和 O2 的混合物作為反應氣體，通過反應磁控濺射獲得了氮化釩和氧氮化物薄膜。在此過程中，兩種氣體之間的質量流量比保持在 N2:O2=20:1 左右。為了獲得氧氮化物的結晶相，在 Ar 氣氛中在 600?C 和 700?C 下進行了 5 分鐘的後快速熱退火 (RTP)。研究的目的是確定磁控濺射參數（如反應氣體流速和退火溫度）對所得氧氮化釩薄膜的成分、微觀結構和光學性能的影響。獲得的薄膜的表徵包括通過表面輪廓儀和 SEM 檢測厚度和形態；分別通過 X 射線衍射和拉曼光譜識別晶體結構和分子極化的進一步微觀結構振動模式；通過 XPS 分析評估薄膜的化學成分；通過紫外-可見-近紅外光譜儀評估透光率、反射率和吸光度。實驗數據表明，當氧氣流速低於0.25sccm且氧/氮比?1/20時，退火膜可以是氮氧化物。退火的氧氮化釩薄膜在其特性方面更接近於氮化釩而不是氧化物：金屬性比半導體性更強，具有暗附屬物，並且在 200 和 900 nm 之間的光譜範圍內具有高吸光度。吸光度在 300 nm 附近幾乎達到 90%，然後在 900 nm 處緩慢降低到 70%。因此，這些薄膜可以是良好的光學屏蔽。在實際使用中，建議使用 O2:N2=1/20、O2<0.25 sccm 和 600?C 退火的沉積，因為通過薄膜的透射率非常低（<10%）。;Vanadium oxynitride (VNxOy, x+y=1) is a metallic compound between vanadium oxides (VO, V2O3, V2O5) and vanadium nitride (VN) which would have interesting properties and functions that potentially can be supplied for different applications. In this study, vanadium nitride and oxynitride thin films were obtained by reactive magnetron sputtering using the V target, Ar as plasma carrier, and mix of N2 and O2 as reactive gas. The ratio of mass flow between the two gases is maintained around N2:O2=20:1 during the process. To obtain crystalline phases of oxynitrides a post rapid thermal annealing (RTP) in Ar atmosphere at 600?C and 700?C for 5 minutes was done. The purpose of the study is to define the effect of the magnetron sputtering parameters, such as reactive gases flow rates, and annealing temperature on the composition, microstructure and optical properties of the obtained vanadium oxynitride thin films. The characterization of obtained films includes the examination of thickness and morphology by the surface profiler and SEM; identifying crystal structures and further microstructural vibration modes of molecular polarizability by X-ray diffraction and Raman spectroscopy, respectively; evaluation of chemical composition of films by XPS analysis; assessing of optical transmittance, reflectance and absorbance by the UV-visible-NIR spectrometer. Experimental data reveal that the annealed films can be oxynitrides when the oxygen flow rate is below 0.25 sccm and ratio of oxygen/nitrogen ?1/20. The annealed vanadium oxynitride films in terms of their properties are closer to vanadium nitrides than to oxides: more metallic than semi-conductive with dark appurtenance and high optical absorbance across the spectrum between 200 and 900 nm. The optical absorbance reaches almost 90% around 300 nm and then slowly reduces to 70% at 900 nm. Thus, these films could be good optical shields. For practical usage, the deposition of O2:N2=1/20, O2<0.25 sccm and 600?C annealing are recommended because of the truly low transmittance (<10%) through films.
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